GaN ICs Accelerate Electric Vehicle Adoption by 3 Years with Faster Charging and Longer Runtime

DUBLIN, September 23, 2021 / PRNewswire / – Navitas Semiconductor, the industry leader in GaN power integrated circuits (“ICs”) and BRUSA HyPower AG (BRUSA), a leading global supplier of intelligent power electronic components and systems for applications drive and stationary vehicles announced a technology development partnership to accelerate the adoption of Navitas GaN power integrated circuits for electric vehicles to reduce the size and weight of power electronic components used for electric vehicle charging.

GaN Power ICs Help Overcome Three Barriers to Electric Vehicle Adoption: Range Anxiety, Long Charging Time, and Cost

Gallium Nitride (GaN) is a next generation semiconductor technology that works up to 20 times faster than traditional silicon and allows up to 3 times more power or 3 times faster charging in half height and weight. GaNFast from Navitas™ Power ICs integrate GaN power and GaN drive along with protection and control to deliver simple, compact, fast and efficient performance. GaN power integrated circuits dominate flagship mobile fast chargers and progress to higher power markets.

Dr. Bernhard Budaker, Vice President of BRUSA, recently presented the company’s technology roadmap and how the company plans to develop the next generation of on-board chargers and DC-DC converters by adopting the next generation of DC-DC technology. GaN power semiconductors.

“BRUSA HyPower is confident that gallium nitride – or GaN – will enable us to further improve our products. The main advantages of Navitas GaN power integrated circuits are the ease of driving high-speed switching performance, increased reliability and a compact form factor, ”said Dr. Budaker. “The technological knowledge provided by Navitas enables us to conduct advanced engineering projects and ensure that BRUSA HyPower stays ahead of the competition.

“BRUSA’s cutting-edge knowledge and comprehensive review of next-generation technologies highlights how GaN power ICs help overcome three barriers to electric vehicle adoption: range anxiety, long charging time and cost, ”said Gene Sheridan, co-founder and CEO of Navitas. “With up to 70% energy savings, we estimate a charge up to 3 times faster and a 5% longer autonomy or a $ 500 save on a typical EV battery. With a roadmap for addressing on-board chargers, DC-DC converters and traction drives, Navitas sees potential $ 250 of GaN revenue per VE in 2026. “

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DNV – an independent international environmental research company – estimated that the adoption of electric vehicles around the world could be accelerated up to 3 years earlier by adopting GaN, which would save 20% of emissions from the road sector. every year by 2050.

About BRUSA HyPower
BRUSA HyPower is a separate legal entity from BRUSA Elektronik AG, a company founded in 1985. The company has focused on the development of highly efficient power electronics for electric mobility. Today, it is a recognized market leader in its field.

Josef Brusa, Chairman of the Board of Directors, is convinced: “The future of mobility is electric. We have been working on this since the inception of BRUSA and today the technology is about to make a breakthrough.

Today, BRUSA develops and produces technologies and products that the company believes will have long-term benefits for the environment and society.

About Navitas

Navitas Semiconductor Limited is the industry leader in GaN power integrated circuits, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined experience of 300 years in materials, devices, applications, systems and marketing, as well as a proven track record of innovation with more than 200 patents among its founders. GaN Power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater power savings for mobile markets, large public, corporate, electric mobility and new energies. Over 130 Navitas patents are issued or pending, and over 25 million GaNFast power integrated circuits have been shipped with no reported GaN field failures. At May 7, 2021, Navitas has announced its intention to “Go in public to an enterprise value of $ 1.04 billion through the SPAC Live Oak II business combination (NYSE: LOKB).

Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and brands are or may be trademarks or registered trademarks used to identify the products or services of their respective owners.

Contact details
Stephane Olivier, Vice President of Corporate Marketing and Investor Relations
[email protected]
+ 1-978-289-2364

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SOURCE Navitas Semiconductor